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Silicon Wafers

Ingentec acts as an agent for MCL Electronic Materials Co., Ltd (Short for MCL) semiconductor silicon wafers. MCL is a silicon material manufacturer of manufacturing CZ silicon ingot, sliced and lapped silicon wafers, polished silicon wafers R & D, manufacture and sales.
MCL mainly produces 100mm, 125mm, 150mm and 200mm wafers, the wafer quality is guaranteed by the advanced equipment, the multiple testing methods, the high-grade facility system and the superior production environment in MCL. MCL is certificated by TS16949 quality management system, IATF16949:2016 and by ISO14001. MCL, the production scale and technical management level are in an advanced position.

PRODUCT INFOMATION

Product Description
Silicon Wafers
Applications

DISCRETE DEVICE

  • Power Transistor Module (MOS/IGBT)
  • Bridge Rectifier, Capacitor
  • Secondary and tertiary tube
  • Thyristor
  • Switching Transistor
  • Time Frequency Microwave Transistor Module

OPTOELECTRONIC DEVICES

  • CCD and cMS image sensor
  • Optical sensor, optical combiner, optical switch
  • Laser transmitter and lifter
  • Solar Cell
  • LED, infrared equipment

INTEGRATED CIRCUIT

Analog IC

  • Power Management Chip
  • RF chip, fingerprint recognition chip

Digital IC

  • Micro-component processor (CPU/MPU microprocessor MCU microcontroller/DSP digital signal processor)
  • Memory (DRAM/NANDFlashRFlash)
  • Logic IC (mobile phone baseband, Ethernet chip, etc.)

SENSOR

  • Pressure sensor
  • Acceleration Gyroscope
  • Temperature sensor
  • MEMS-based actuator
  • Magnetic Field Sensor
Feature

Monocrystalline Silicon Polished Wafer

4 inch

Diameter(mm)：100

6 inch

Diameter(mm)：150

5 inch

Diameter(mm)：125

8 inch

Diameter(mm)：200


 
Product Specs

PROJECT PARAMETER VALUE PROJECT PARAMETER VALUE
parameter 100mm/125mm/150mm/200mm Total flatness 2.0 Microns Max
Growth method CZ Total thickness change 3.0 Microns Max
Dopant P , P+；Boron / N, N+；Phos.,Sb, As Local flatness 1.0 Microns Max
Crystal orientation 1-0-0 / 1-1-1 / 1-1-0 Warpage 30  Microns Max
resistivity P: 0.001-300
N: Phos. 0.0007-100   Sb. 0.006-0.02   As. 0.001-0.01		 Curvature 30  Microns Max
oxygen content 6-18PPMA(New ASTM) thickness Target + / -15Microns
carbon content 0.5PPMA Max Number of positive particles 0.3Microns 10Max/Wafer   0.2Microns 18Max/Wafer 
Bulk metal content 5*1010 atoms/cm3 Max Front of silicon wafer Polished
Surface metal content 5*1010 atoms/cm2 Max Back of silicon wafer BSD/Poly/SiO2/Etched
dislocation None Laser inscription Hard/Soft laser marking

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